DMN7022LFGQ-13
MOSFET N-CH 75V 23A POWERDI3333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMN7022LFGQ-13, an N-Channel MOSFET designed for efficient power management applications. This component features a Drain-Source Voltage (Vdss) of 75 V and a continuous drain current (Id) of 23 A at 25°C (Tc). The low on-resistance of 22 mOhm at 7.2 A and 10 V Vgs, combined with a Vgs(th) of 3 V, ensures minimal conduction losses. The device is housed in a compact 8-PowerVDFN (POWERDI3333-8) package, facilitating high-density board layouts. Key electrical parameters include a maximum Gate Charge (Qg) of 56.5 nC at 10 V and an input capacitance (Ciss) of 2737 pF at 35 V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in automotive and industrial power conversion systems. The DMN7022LFGQ-13 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 56.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2737 pF @ 35 V |
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