DMN63D1L-7
MOSFET N-CH 60V 380MA SOT23Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMN63D1L-7, a N-Channel MOSFET designed for surface mount applications. This component offers a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) capability of 380mA at 25°C (Ta). The device features a maximum on-resistance (Rds On) of 2 Ohms at 500mA and 10V. Key parameters include a gate charge (Qg) of 0.3 nC at 4.5V and input capacitance (Ciss) of 30 pF at 25V. With a maximum power dissipation of 370mW (Ta), it operates within a temperature range of -55°C to 150°C (TJ). The DMN63D1L-7 is supplied in a SOT-23-3 package, commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 380mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 30 pF @ 25 V |
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