DMN62D0UWQ-7
MOSFET N-CH 60V 340MA SOT323Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel Power MOSFET, part number DMN62D0UWQ-7, features a 60V drain-source breakdown voltage and a continuous drain current of 340mA at 25°C (Ta). This AEC-Q101 qualified component is housed in a compact SOT-323 package, suitable for surface mounting. Key specifications include a maximum power dissipation of 320mW (Ta) and a low on-resistance of 2Ohm at 100mA, 4.5V. The device offers a gate threshold voltage of 1V (max) at 250µA and a gate charge of 0.5 nC (max) at 4.5V. Ideal for automotive applications, its operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 340mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 100mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 320mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-323 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 32 pF @ 30 V |
| Qualification | AEC-Q101 |
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