DMN62D0LFD-13
MOSFET N-CH X1-DFN1212-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMN62D0LFD-13 is an N-Channel MOSFET designed for surface mount applications. This device features a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 310mA at 25°C ambient. The Rds(on) is specified at a maximum of 2 Ohms with an Id of 100mA and Vgs of 4V, with drive voltages ranging from 1.8V to 4V. Gate charge (Qg) is a maximum of 0.5 nC at 4.5V, and input capacitance (Ciss) is a maximum of 31 pF at 25V. The MOSFET is housed in a compact X1-DFN1212-3 package, enabling high-density board designs. Power dissipation is rated at 480mW (Ta). This component is commonly utilized in power management and signal switching applications across various industries. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-UDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 310mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 100mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 480mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | X1-DFN1212-3 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 31 pF @ 25 V |
| Qualification | - |
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