DMN61D9UW-7
MOSFET N-CH 60V 340MA SOT323Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMN61D9UW-7, an N-Channel MOSFET designed for efficient switching applications. This component features a drain-source breakdown voltage (Vdss) of 60V and a continuous drain current (Id) of 340mA at 25°C (Ta). The Rds On is specified at a maximum of 2 Ohms when driven with 5V for 50mA. Key electrical parameters include a gate charge (Qg) of 0.4 nC at 4.5V and input capacitance (Ciss) of 28.5 pF at 30V. The device operates across a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 320mW (Ta). The DMN61D9UW-7 is housed in a compact SOT-323 (SC-70) surface mount package, supplied on tape and reel. This MOSFET is suitable for use in power management and signal switching circuits across various electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 340mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 320mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-323 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28.5 pF @ 30 V |
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