DMN61D9UT-7
2N7002 FAMILY SOT523 T&R 3KManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, DMN61D9UT-7, is a surface-mount device in a SOT-523 package, supplied on tape and reel. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 350mA at 25°C ambient. The on-resistance (Rds On) is specified at a maximum of 2 Ohms when conducting 50mA with a 5V gate-source voltage. Key parameters include a maximum power dissipation of 260mW (Ta) and a gate charge of 0.4nC at 4.5V. This MOSFET is suitable for applications requiring low power switching and signal amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 260mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-523 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28.5 pF @ 30 V |
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