DMN61D9UT-13
2N7002 FAMILY SOT523 T&R 10KManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated N-Channel MOSFET, part number DMN61D9UT-13, features a 60V Drain-Source Voltage (Vdss) and a continuous Drain Current (Id) of 350mA at 25°C ambient. This device offers a maximum On-Resistance (Rds On) of 2 Ohms at 50mA and 5V Vgs. The Gate Charge (Qg) is a maximum of 0.4 nC at 4.5V Vgs, and the input capacitance (Ciss) is a maximum of 28.5 pF at 30V Vds. It operates with a Gate-Source Voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 1V at 250µA. The MOSFET is packaged in a SOT-523 surface mount case and supplied on tape and reel. With a maximum power dissipation of 260mW at 25°C ambient, this component is suitable for applications requiring efficient switching and signal control in areas such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 260mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-523 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28.5 pF @ 30 V |
Request a Quote
Clients Also Buy
DMN2053UQ-7
MOSFET BVDSS: 8V~24V SOT23 T&R 3
DMN2011UFDF-13
MOSFET N-CH 20V 14.2A 6UDFN
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
