DMN61D9U-7
MOSFET N-CH 60V 380MA SOT23Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMN61D9U-7 is an N-Channel MOSFET designed for general-purpose switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 380mA at 25°C ambient temperature, with a maximum power dissipation of 370mW (Ta). The Rds On is specified at a maximum of 2 Ohms at 50mA and 5V gate-source voltage.
Key electrical parameters include a maximum Gate Charge (Qg) of 0.4 nC at 4.5V and a maximum Input Capacitance (Ciss) of 28.5 pF at 30V. The gate-source voltage (Vgs) threshold is 1V at 250µA, with a maximum allowable Vgs of ±20V. This MOSFET utilizes Metal Oxide technology and is packaged in a compact SOT-23-3 (TO-236-3, SC-59) surface mount configuration, supplied on tape and reel. It operates across a temperature range of -55°C to 150°C. The DMN61D9U-7 is suitable for use in various electronic systems, including consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 380mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 370mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28.5 pF @ 30 V |
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