DMN61D9U-13
MOSFET N-CH 60V 380MA SOT23-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated DMN61D9U-13 is an N-Channel MOSFET designed for efficient power switching. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 380mA at 25°C. The Rds On is specified at a maximum of 2 Ohms when driven by 5V at 50mA. With a Vgs(th) of 1V at 250µA and a gate charge (Qg) of 0.4 nC at 4.5V, it offers responsive switching characteristics. Its input capacitance (Ciss) is a maximum of 28.5 pF at 30V. The DMN61D9U-13 is housed in a compact SOT-23-3 (TO-236-3, SC-59) surface-mount package, suitable for high-density board layouts. It operates across an industrial temperature range of -55°C to 150°C. This component finds application in various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 380mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 370mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28.5 pF @ 30 V |
Request a Quote
Clients Also Buy
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
DMP21D0UFB-7
MOSFET P-CH 20V 770MA 3DFN
DMTH43M8LFGQ-13
MOSFET N-CH 40V PWRDI3333
