DMN60H4D5SK3-13
MOSFET N-CH 600V 2.5A TO252Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel Power MOSFET, part number DMN60H4D5SK3-13, offers a 600V Drain-to-Source Voltage (Vdss) and a continuous drain current of 2.5A at 25°C. This surface mount device, housed in a TO-252 (DPAK) package, features a maximum power dissipation of 41W. Key electrical characteristics include a maximum on-resistance (Rds On) of 4.5 Ohms at 1A and 10V, and a gate charge (Qg) of 8.2 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 273.5 pF at 25V. The operating temperature range is -55°C to 150°C. This component is utilized across various industries including industrial power supplies and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 273.5 pF @ 25 V |
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