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DMN60H4D5SK3-13

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DMN60H4D5SK3-13

MOSFET N-CH 600V 2.5A TO252

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated N-Channel Power MOSFET, part number DMN60H4D5SK3-13, offers a 600V Drain-to-Source Voltage (Vdss) and a continuous drain current of 2.5A at 25°C. This surface mount device, housed in a TO-252 (DPAK) package, features a maximum power dissipation of 41W. Key electrical characteristics include a maximum on-resistance (Rds On) of 4.5 Ohms at 1A and 10V, and a gate charge (Qg) of 8.2 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 273.5 pF at 25V. The operating temperature range is -55°C to 150°C. This component is utilized across various industries including industrial power supplies and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Rds On (Max) @ Id, Vgs4.5Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)41W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds273.5 pF @ 25 V

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