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DMN60H3D5SK3-13

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DMN60H3D5SK3-13

MOSFET N-CH 600V 2.8A TO252

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated presents the DMN60H3D5SK3-13, an N-Channel MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 2.8 A at 25°C. The on-resistance (Rds On) is a maximum of 3.5 Ohms at 1.5 A and 10 V gate drive. With a maximum power dissipation of 41 W (Tc), this MOSFET is suitable for demanding power conversion and control circuits. Key parameters include a gate charge (Qg) of 12.6 nC at 10 V and an input capacitance (Ciss) of 354 pF at 25 V. The device operates within a temperature range of -55°C to 150°C (TJ). Packaged in a TO-252 (DPAK) surface-mount configuration, the DMN60H3D5SK3-13 is commonly utilized in industrial power supplies, lighting, and automotive electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
Rds On (Max) @ Id, Vgs3.5Ohm @ 1.5A, 10V
FET Feature-
Power Dissipation (Max)41W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds354 pF @ 25 V

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