DMN60H3D5SK3-13
MOSFET N-CH 600V 2.8A TO252Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMN60H3D5SK3-13, an N-Channel MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 2.8 A at 25°C. The on-resistance (Rds On) is a maximum of 3.5 Ohms at 1.5 A and 10 V gate drive. With a maximum power dissipation of 41 W (Tc), this MOSFET is suitable for demanding power conversion and control circuits. Key parameters include a gate charge (Qg) of 12.6 nC at 10 V and an input capacitance (Ciss) of 354 pF at 25 V. The device operates within a temperature range of -55°C to 150°C (TJ). Packaged in a TO-252 (DPAK) surface-mount configuration, the DMN60H3D5SK3-13 is commonly utilized in industrial power supplies, lighting, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 354 pF @ 25 V |
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