DMN6069SFVWQ-13
MOSFET BVDSS: 41V~60V POWERDI333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, DMN6069SFVWQ-13, features a 60V drain-to-source voltage and a continuous drain current of 4A at 25°C ambient, or 14A at 25°C case temperature. This automotive-grade component, qualified to AEC-Q101, is housed in an 8-PowerVDFN package with wettable flank technology, specifically the PowerDI3333-8 (SWP) Type UX. The Rds(On) is specified at a maximum of 69mOhm at 3A and 10V Vgs. Key parameters include a gate charge of 14nC (max) at 10V Vgs and input capacitance of 740pF (max) at 30V Vds. Power dissipation is rated at 2.5W (Ta). This device is suitable for applications demanding robust power switching and is commonly found in automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta), 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (SWP) Type UX |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 30 V |
| Qualification | AEC-Q101 |
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