DMN6069SFVW-7
MOSFET BVDSS: 41V~60V POWERDI333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMN6069SFVW-7, an N-Channel Power MOSFET designed for demanding applications. This component features a BVDSS of 60V and a continuous drain current capability of 4A at ambient temperature and 14A at case temperature. With a maximum Rds(On) of 69mOhm at 3A and 10V Vgs, and a low input capacitance of 740pF (max) at 30V Vds, the DMN6069SFVW-7 offers efficient switching performance. The device operates within a temperature range of -55°C to 150°C and is housed in a wettable flank PowerDI3333-8 package, suitable for automated surface-mount assembly. This MOSFET is utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta), 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (SWP) Type UX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 30 V |
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