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DMN6069SFVW-13

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DMN6069SFVW-13

MOSFET BVDSS: 41V~60V POWERDI333

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated N-Channel Power MOSFET, part number DMN6069SFVW-13, features a 60V Vds rating and a continuous drain current of 4A at 25°C ambient, and 14A at 25°C case temperature. This device offers a maximum Rds(on) of 69mOhm at 3A, 10V, with a gate drive voltage range of 4.5V to 10V. The MOSFET is housed in an 8-PowerDI3333-8 (SWP) Type UX surface mount package, incorporating wettable flank technology for enhanced inspection. Key electrical characteristics include a maximum gate charge of 14 nC at 10V and a maximum input capacitance of 740 pF at 30V. Operating temperature range is -55°C to 150°C. This component is utilized in industries such as automotive and industrial power management.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs69mOhm @ 3A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds740 pF @ 30 V

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