DMN6040SSSQ-13
MOSFET BVDSS: 41V~60V SO-8 T&R 2Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated N-Channel Power MOSFET DMN6040SSSQ-13 offers a 60V drain-source breakdown voltage and a continuous drain current rating of 5.5A at 25°C ambient. This AEC-Q101 qualified component features a low on-resistance of 40mOhm maximum at 4.5A and 10V Vgs, with a gate charge of 22.4nC maximum. It is supplied in an 8-SO package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. The DMN6040SSSQ-13 is designed for applications requiring efficient power switching in the automotive sector.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1287 pF @ 25 V |
| Qualification | AEC-Q101 |
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