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DMN6040SSSQ-13

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DMN6040SSSQ-13

MOSFET BVDSS: 41V~60V SO-8 T&R 2

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated N-Channel Power MOSFET DMN6040SSSQ-13 offers a 60V drain-source breakdown voltage and a continuous drain current rating of 5.5A at 25°C ambient. This AEC-Q101 qualified component features a low on-resistance of 40mOhm maximum at 4.5A and 10V Vgs, with a gate charge of 22.4nC maximum. It is supplied in an 8-SO package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. The DMN6040SSSQ-13 is designed for applications requiring efficient power switching in the automotive sector.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.5A (Ta)
Rds On (Max) @ Id, Vgs40mOhm @ 4.5A, 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SO
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1287 pF @ 25 V
QualificationAEC-Q101

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