DMN6040SK3Q-13
MOSFET BVDSS: 41V-60V TO252 T&RManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET DMN6040SK3Q-13 offers a 60V drain-source breakdown voltage and 20A continuous drain current at 25°C. This surface-mount device, packaged in a TO-252 (DPAK) case, features a maximum on-resistance of 40mOhm at 20A and 10V Vgs. With a gate charge of 22.4 nC at 10V and input capacitance of 1287 pF at 25V, it supports drive voltages from 4.5V to 10V. The device boasts a power dissipation of 42W at 25°C and operates across a temperature range of -55°C to 150°C. Qualified to AEC-Q101 and designed for automotive applications, this Diodes Incorporated MOSFET is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1287 pF @ 25 V |
| Qualification | AEC-Q101 |
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