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DMN5L06T-7

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DMN5L06T-7

MOSFET N-CH 50V 280MA SOT-523

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated N-Channel MOSFET, part number DMN5L06T-7, offers a 50V drain-source breakdown voltage and a continuous drain current of 280mA at 25°C. This surface-mount component, housed in a compact SOT-523 package, features a maximum power dissipation of 150mW. The Rds On is specified at 3 Ohms maximum for an Id of 200mA and Vgs of 2.7V, with drive voltages ranging from 1.8V to 2.7V. Key parameters include a Vgs(th) of 1.2V at 250µA and an input capacitance (Ciss) of 50pF at 25V. Operating across a temperature range of -55°C to 150°C, this device is suitable for various applications including consumer electronics and industrial control systems. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-523
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C280mA (Ta)
Rds On (Max) @ Id, Vgs3Ohm @ 200mA, 2.7V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device PackageSOT-523
Drive Voltage (Max Rds On, Min Rds On)1.8V, 2.7V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V

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