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DMN5L06KQ-7

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DMN5L06KQ-7

MOSFET N-CH 50V 300MA SOT23

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMN5L06KQ-7 is an N-Channel MOSFET with a drain-source voltage (Vdss) of 50 V. This device offers a continuous drain current (Id) of 300mA at 25°C with a maximum power dissipation of 350mW. The Rds On is specified at 2 Ohm maximum for 50mA drain current and 5V gate-source voltage. The MOSFET features a gate-source threshold voltage (Vgs(th)) of 1V maximum at 250µA and a maximum gate-source voltage of ±20V. Input capacitance (Ciss) is a maximum of 50 pF at 25V. The DMN5L06KQ-7 is supplied in a SOT-23-3 package, suitable for surface mounting. It is qualified to AEC-Q101 standards, indicating suitability for automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 84 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Rds On (Max) @ Id, Vgs2Ohm @ 50mA, 5V
FET Feature-
Power Dissipation (Max)350mW
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSOT-23-3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)1.8V, 5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V
QualificationAEC-Q101

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