DMN55D0UTQ-7
MOSFET N-CH 50V 160MA SOT-523Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, part number DMN55D0UTQ-7, offers a 50V drain-source breakdown voltage and a continuous drain current of 160mA at 25°C. This surface mount component in a SOT-523 package features a maximum on-resistance of 4 Ohm at 100mA and 4V Vgs. With a gate threshold voltage of 1V at 250µA and a maximum gate-source voltage of ±12V, it is suitable for applications requiring efficient switching. The device has an input capacitance of 25pF at 10V Vds and a maximum continuous power dissipation of 200mW at 25°C. Operating temperature ranges from -55°C to 150°C. This component finds use in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 100mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-523 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 50 V |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 10 V |
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