DMN55D0UT-7
MOSFET N-CH 50V 160MA SOT-523Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, part number DMN55D0UT-7, is a surface-mount component in a SOT-523 package. This device features a Drain-Source Voltage (Vdss) of 50V and a continuous drain current (Id) of 160mA at 25°C, with a maximum power dissipation of 200mW. The Rds On is specified at 4 Ohms maximum for an Id of 100mA and Vgs of 4V, with drive voltages ranging from 2.5V to 4V. Input capacitance (Ciss) is a maximum of 25 pF at 10V. Operating temperature range is from -55°C to 150°C. This component is utilized in various applications within the consumer electronics and industrial sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 100mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-523 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 50 V |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 10 V |
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