DMN4060SVTQ-7
MOSFET BVDSS: 31V~40V TSOT26 T&RManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMN4060SVTQ-7 is an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 45V and a continuous Drain Current (Id) of 4.3A at 25°C, with a maximum power dissipation of 1.2W. Key parameters include a low on-resistance (Rds On) of 46mOhm at 4.3A and 10V Vgs, and a Gate Charge (Qg) of 20nC at 10V. With a threshold voltage (Vgs(th)) of 3V at 250µA and a maximum gate-source voltage of ±20V, it offers robust drive characteristics. The DMN4060SVTQ-7 utilizes MOSFET technology and is housed in a compact TSOT-26 surface mount package. Its AEC-Q101 qualification makes it suitable for automotive applications and other environments requiring high reliability.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TSOT-26 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1159 pF @ 25 V |
| Qualification | AEC-Q101 |
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