DMN4060SVTQ-13
MOSFET BVDSS: 31V~40V TSOT26 T&RManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMN4060SVTQ-13 is an N-Channel Power MOSFET designed for demanding applications. This MOSFET features a Drain-Source Voltage (Vdss) of 45V and a continuous drain current (Id) of 4.3A at 25°C (Ta), with a maximum power dissipation of 1.2W (Ta). The Rds (On) is specified at a maximum of 46mOhm at 4.3A and 10V Vgs. Key parameters include a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 1159 pF at 25V. This component is housed in a TSOT-26 package and is qualified to AEC-Q101, making it suitable for automotive and industrial sectors. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TSOT-26 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1159 pF @ 25 V |
| Qualification | AEC-Q101 |
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