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DMN4027SSS-13

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DMN4027SSS-13

MOSFET N-CH 40V 6A 8SO

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated N-Channel MOSFET, part number DMN4027SSS-13, offers a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C (Ta). This surface mount component, packaged in an 8-SOIC (0.154", 3.90mm Width), features a low on-resistance of 27mOhm maximum at 7A and 10V Vgs. Key parameters include a maximum gate charge (Qg) of 12.9 nC at 10V and input capacitance (Ciss) of 604 pF maximum at 20V Vds. The device supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. With a power dissipation of 1.56W (Ta) and an operating temperature range of -55°C to 150°C (TJ), the DMN4027SSS-13 is suitable for applications in power management and general electronics. This MOSFET is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs27mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)1.56W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SO
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds604 pF @ 20 V

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