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DMN4009LK3-13

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DMN4009LK3-13

MOSFET N-CH 40V 18A TO252-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated presents the DMN4009LK3-13, a 40V N-Channel MOSFET in a TO-252-3 (DPAK) package. This surface-mount component offers a continuous drain current (Id) of 18A at 25°C, with a maximum power dissipation of 2.19W (Ta). Key electrical characteristics include a low on-resistance (Rds On) of 8.5mOhm at 14A and 10V, and a gate charge (Qg) of 21 nC at 4.5V. Input capacitance (Ciss) is specified at a maximum of 2072 pF at 20V. The device operates across an ambient temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power management, consumer electronics, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Rds On (Max) @ Id, Vgs8.5mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)2.19W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2072 pF @ 20 V

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