DMN4009LK3-13
MOSFET N-CH 40V 18A TO252-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated presents the DMN4009LK3-13, a 40V N-Channel MOSFET in a TO-252-3 (DPAK) package. This surface-mount component offers a continuous drain current (Id) of 18A at 25°C, with a maximum power dissipation of 2.19W (Ta). Key electrical characteristics include a low on-resistance (Rds On) of 8.5mOhm at 14A and 10V, and a gate charge (Qg) of 21 nC at 4.5V. Input capacitance (Ciss) is specified at a maximum of 2072 pF at 20V. The device operates across an ambient temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power management, consumer electronics, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.19W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2072 pF @ 20 V |
Request a Quote
Clients Also Buy
DMN2009LSS-13
MOSFET N-CH 20V 12A 8SOP
DMT6030LFDF-7
MOSFET N-CH 60V 6.8A 6UDFN
DMN62D0UWQ-7
MOSFET N-CH 60V 340MA SOT323
