DMN3732UFB4-7
MOSFET BVDSS: 25V~30V X2-DFN1006Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMN3732UFB4-7 is an N-Channel MOSFET designed for efficient power management. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 1.3A at 25°C (Ta). Its low on-resistance is specified at 460mOhm maximum at 200mA and 4.5V Vgs. The device is housed in a compact 3-XFDFN (X2-DFN1006-3) package, suitable for surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 0.9 nC at 4.5V and a maximum input capacitance (Ciss) of 40.8 pF at 25V. The Diodes Incorporated DMN3732UFB4-7 operates across a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 490mW (Ta). This MOSFET is utilized in various applications including power switching and battery management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 490mW (Ta) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | X2-DFN1006-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40.8 pF @ 25 V |
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