Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

DMN3112SSS-13

Banner
productimage

DMN3112SSS-13

MOSFET N-CH 30V 6A 8SOP

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMN3112SSS-13, an N-Channel MOSFET, offers a 30V drain-to-source voltage with a continuous drain current capability of 6A at 25°C. This device features a low Rds(on) of 57mOhm maximum at 5.8A and 10V Vgs, ensuring efficient power switching. The DMN3112SSS-13 is housed in an 8-SOP package, facilitating surface mount integration into compact designs. With a maximum power dissipation of 2.5W (Ta) and an operating junction temperature range of -55°C to 150°C, it is suitable for demanding applications in automotive, industrial, and consumer electronics. The input capacitance (Ciss) is 268 pF maximum at 15V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs57mOhm @ 5.8A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-SOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds268 pF @ 15 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
DMN2053UQ-7

MOSFET BVDSS: 8V~24V SOT23 T&R 3

product image
DMN2011UFDF-13

MOSFET N-CH 20V 14.2A 6UDFN

product image
DMN3008SFGQ-13

MOSFET N-CH 30V PWRDI3333