DMN3112S-7
MOSFET N-CH 30V 5.8A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMN3112S-7 is an N-Channel MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.8A at 25°C, with a maximum power dissipation of 1.4W. The Rds On is specified at a maximum of 57mOhm at 5.8A and 10V gate-source voltage. It operates with gate drive voltages ranging from 4.5V to 10V and has a maximum gate-source voltage tolerance of ±20V. The input capacitance (Ciss) is 268 pF at 5V. The DMN3112S-7 is housed in a SOT-23-3 surface-mount package, suitable for high-density board designs. This MOSFET is commonly utilized in power management, automotive systems, and industrial control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 5.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 268 pF @ 5 V |
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