DMN3110LCP3-7
MOSFET N-CH 30V 3.2A 3DFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated’s DMN3110LCP3-7 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30 V Drain-Source Voltage (Vdss) and a continuous drain current capability of 3.2 A at 25°C (Ta), with a maximum power dissipation of 1.38 W. The device exhibits a low on-resistance (Rds On) of 69 mOhm at 500 mA and 8 V.
Optimized for compact designs, the DMN3110LCP3-7 is housed in a 3-XFDFN package, specifically the X2-DFN1006-3 footprint, enabling high-density board layouts. Its gate threshold voltage (Vgs(th)) is a maximum of 1.1 V at 250 µA, and it operates effectively with drive voltages ranging from 1.8 V to 8 V. Key electrical parameters include a maximum gate charge (Qg) of 1.52 nC at 4.5 V and input capacitance (Ciss) of 150 pF at 15 V. This MOSFET is suitable for use in portable electronics, power management, and automotive applications. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 500mA, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 1.38W |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | X2-DFN1006-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
| Vgs (Max) | 12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.52 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 15 V |
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