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DMN3110LCP3-7

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DMN3110LCP3-7

MOSFET N-CH 30V 3.2A 3DFN

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated’s DMN3110LCP3-7 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30 V Drain-Source Voltage (Vdss) and a continuous drain current capability of 3.2 A at 25°C (Ta), with a maximum power dissipation of 1.38 W. The device exhibits a low on-resistance (Rds On) of 69 mOhm at 500 mA and 8 V. Optimized for compact designs, the DMN3110LCP3-7 is housed in a 3-XFDFN package, specifically the X2-DFN1006-3 footprint, enabling high-density board layouts. Its gate threshold voltage (Vgs(th)) is a maximum of 1.1 V at 250 µA, and it operates effectively with drive voltages ranging from 1.8 V to 8 V. Key electrical parameters include a maximum gate charge (Qg) of 1.52 nC at 4.5 V and input capacitance (Ciss) of 150 pF at 15 V. This MOSFET is suitable for use in portable electronics, power management, and automotive applications. The operating temperature range is from -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-XFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Rds On (Max) @ Id, Vgs69mOhm @ 500mA, 8V
FET Feature-
Power Dissipation (Max)1.38W
Vgs(th) (Max) @ Id1.1V @ 250µA
Supplier Device PackageX2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 8V
Vgs (Max)12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs1.52 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 15 V

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