DMN30H4D1S-7
MOSFET N-CH 300V 430MA SOT23Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated's DMN30H4D1S-7 is an N-channel MOSFET designed for surface-mount applications. This component features a 300V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 430mA at 25°C (Ta). With a maximum on-resistance (Rds On) of 4 Ohms at 300mA and 10V Vgs, it offers efficient switching. The gate charge (Qg) is specified at a maximum of 4.8 nC at 10V, and input capacitance (Ciss) is 174pF maximum at 25V Vds. The DMN30H4D1S-7 is housed in a SOT-23-3 package and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 430mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 174 pF @ 25 V |
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