DMN30H4D1S-13
MOSFET N-CH 300V 430MA SOT23Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMN30H4D1S-13 is an N-Channel MOSFET designed for surface mount applications. This component features a 300V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 430mA at 25°C ambient. The device exhibits a maximum on-resistance (Rds On) of 4 Ohms at 300mA and 10V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 4.8 nC maximum at 10V and input capacitance (Ciss) of 174 pF maximum at 25V. The DMN30H4D1S-13 is housed in a SOT-23-3 package and operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power management and general-purpose switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 430mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 174 pF @ 25 V |
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