DMN30H14DLY-13
MOSFET N-CH 300V 210MA SOT89Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMN30H14DLY-13, an N-Channel Power MOSFET designed for demanding applications. This component features a 300V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 210mA at 25°C (Ta), with a maximum power dissipation of 900mW (Ta). The device is housed in a SOT-89-3 (TO-243AA) surface mount package for efficient board space utilization. Key electrical characteristics include a low on-resistance (Rds On) of 14 Ohms maximum at 300mA, 10V, and a gate charge (Qg) of 4 nC maximum at 10V. Input capacitance (Ciss) is specified at 96 pF maximum at 25V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power management and general switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 210mA (Ta) |
| Rds On (Max) @ Id, Vgs | 14Ohm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-89-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 96 pF @ 25 V |
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