DMN3071LFR4-7
MOSFET N-CH 30V 3.4A 3DFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMN3071LFR4-7 is an N-Channel Power MOSFET designed for high-efficiency applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.4A at 25°C ambient. With a maximum on-resistance (Rds On) of 65mOhm at 3.2A and 10V Vgs, it offers low conduction losses. The MOSFET is packaged in a compact 3-XFDFN (X2-DFN1010-3) with a surface mount configuration, suitable for space-constrained designs. Key electrical parameters include a gate charge (Qg) of 4.5 nC and an input capacitance (Ciss) of 190 pF, both measured under specified conditions. Operating across a temperature range of -55°C to 150°C, this component finds application in various power management circuits, including consumer electronics and industrial automation. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | X2-DFN1010-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 15 V |
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