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DMN3052L-7

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DMN3052L-7

MOSFET N-CH 30V 5.4A SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated's DMN3052L-7 is a 30V N-Channel MOSFET designed for surface mount applications. This component, housed in a SOT-23-3 package, offers a continuous drain current capability of 5.4A at 25°C, with a maximum power dissipation of 1.4W. Key electrical parameters include a drain-to-source voltage (Vdss) of 30V and a maximum gate-source voltage (Vgs) of ±12V. The Rds On is specified at a maximum of 32mOhm at 5.8A and 10V Vgs, with a threshold voltage (Vgs(th)) of 1.2V at 250µA. Input capacitance (Ciss) is a maximum of 555pF at 5V. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for various applications, including power management and switching circuits in the automotive and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.4A (Ta)
Rds On (Max) @ Id, Vgs32mOhm @ 5.8A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)2V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds555 pF @ 5 V

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