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DMN3050S-7

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DMN3050S-7

MOSFET N-CH 30V 5.2A SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMN3050S-7 is an N-Channel MOSFET designed for efficient power switching applications. This component offers a 30V drain-source voltage (Vdss) and a continuous drain current of 5.2A at 25°C, with a maximum power dissipation of 1.4W. The device features a low on-resistance (Rds On) of 35mOhm at 5.2A and 10V Vgs, achievable with drive voltages from 4.5V to 10V. Input capacitance (Ciss) is specified at a maximum of 390pF at 15V. Housed in a compact SOT-23-3 package, the DMN3050S-7 is suitable for surface mounting and operates across a wide temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power management, consumer electronics, and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.2A (Ta)
Rds On (Max) @ Id, Vgs35mOhm @ 5.2A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds390 pF @ 15 V

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