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DMN3031LSS-13

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DMN3031LSS-13

MOSFET N-CH 30V 9A 8SOP

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMN3031LSS-13 is an N-Channel MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 9 A at 25°C (Ta), with a maximum power dissipation of 2.5 W (Ta). The Rds On is specified at a maximum of 18.5 mOhm at 9 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 25 nC (Max) at 10 V and an Input Capacitance (Ciss) of 741 pF (Max) at 15 V. The device operates across a temperature range of -55°C to 150°C (TJ). It is supplied in an 8-SOP package, suitable for surface mounting, and is delivered on tape and reel. This MOSFET finds application in power management, consumer electronics, and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Rds On (Max) @ Id, Vgs18.5mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id2.1V @ 250µA
Supplier Device Package8-SOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds741 pF @ 15 V

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