DMN3030LFG-7
MOSFET N-CH 30V 5.3A PWRDI3333-8Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMN3030LFG-7 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 5.3A at 25°C. The device exhibits a low on-resistance of 18mOhm maximum at 10A and 10V Vgs, contributing to reduced conduction losses. With a maximum power dissipation of 900mW (Ta), it is suitable for operation within a junction temperature range of -55°C to 150°C. The DMN3030LFG-7 utilizes the compact POWERDI3333-8 package for surface mount assembly, offering excellent thermal performance. Key electrical characteristics include a gate charge of 17.4 nC maximum and an input capacitance of 751 pF maximum. This MOSFET is commonly employed in power management, consumer electronics, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 751 pF @ 10 V |
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