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DMN3030LFG-7

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DMN3030LFG-7

MOSFET N-CH 30V 5.3A PWRDI3333-8

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMN3030LFG-7 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 5.3A at 25°C. The device exhibits a low on-resistance of 18mOhm maximum at 10A and 10V Vgs, contributing to reduced conduction losses. With a maximum power dissipation of 900mW (Ta), it is suitable for operation within a junction temperature range of -55°C to 150°C. The DMN3030LFG-7 utilizes the compact POWERDI3333-8 package for surface mount assembly, offering excellent thermal performance. Key electrical characteristics include a gate charge of 17.4 nC maximum and an input capacitance of 751 pF maximum. This MOSFET is commonly employed in power management, consumer electronics, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Rds On (Max) @ Id, Vgs18mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Vgs(th) (Max) @ Id2.1V @ 250µA
Supplier Device PackagePOWERDI3333-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs17.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds751 pF @ 10 V

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