DMN3030LFG-13
DMN3030LFG-13Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel Power MOSFET, part number DMN3030LFG-13, offers a 30V drain-source voltage rating and a continuous drain current of 5.3A at 25°C ambient. This AEC-Q101 qualified component features a low Rds(on) of 18mOhm at 10A and 10V Vgs, and a gate charge of 17.4 nC at 10V. The DMN3030LFG-13 is housed in a compact 8-PowerVDFN (POWERDI3333-8) surface mount package, designed for efficient thermal management with a maximum power dissipation of 900mW (Ta). Engineered for automotive applications, it operates across a temperature range of -55°C to 150°C. Key parameters include input capacitance of 751pF at 10V and a Vgs(th) of 2.1V at 250µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 751 pF @ 10 V |
| Qualification | AEC-Q101 |
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