DMN3025LFG-13
MOSFET N-CH 30V 7.5A PWRDI3333-8Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, part number DMN3025LFG-13, is a 30V device designed for high-efficiency power switching applications. This MOSFET features a low Rds(on) of 18mOhm at 7.8A and 10V Vgs, minimizing conduction losses. With a continuous drain current capability of 7.5A (Ta) and a maximum power dissipation of 2W (Ta), it is suitable for demanding thermal environments. The device is housed in an 8-PowerVDFN package, specifically the POWERDI3333-8, facilitating efficient heat dissipation and compact board layouts. Key parameters include a gate charge (Qg) of 11.6 nC (max) at 10V Vgs and input capacitance (Ciss) of 605 pF (max) at 15V Vds. This component finds application in various industries, including automotive, industrial, and consumer electronics, where robust power management is critical. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 605 pF @ 15 V |
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