DMN3021LFDF-13
MOSFET N-CH 30V 11.8A 6UDFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, DMN3021LFDF-13, features 30V drain-source breakdown voltage and a continuous drain current of 11.8A at 25°C (Ta). This device offers a low on-resistance of 15mOhm maximum at 7A and 10V Vgs, with a gate voltage drive range of 4.5V to 10V. Designed in a compact 6-UDFN exposed pad package (U-DFN2020-6 Type F), it supports surface mounting and operates across a wide temperature range of -55°C to 150°C. Key electrical characteristics include a maximum gate charge of 14 nC at 10V and a maximum input capacitance of 706 pF at 15V. Power dissipation is rated at 2.03W (Ta). This component is suitable for applications in power management and switching circuits within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.03W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 706 pF @ 15 V |
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