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DMN3020LK3-13

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DMN3020LK3-13

MOSFET N-CH 30V 11.3A TO252-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated presents the DMN3020LK3-13, an N-Channel MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 11.3A at 25°C ambient. With a low on-resistance of 20mOhm maximum at 7A and 10V Vgs, it minimizes conduction losses. The DMN3020LK3-13 utilizes a surface-mount TO-252-3 (DPAK) package for thermal management and ease of assembly. It exhibits a typical gate charge of 6.3 nC at 4.5V Vgs, facilitating fast switching transitions. Key parameters include an input capacitance (Ciss) of 608 pF maximum at 15V Vds and a maximum power dissipation of 2.17W at 25°C ambient. This component is suitable for use in power management, consumer electronics, and industrial automation systems. It operates reliably across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11.3A (Ta)
Rds On (Max) @ Id, Vgs20mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)2.17W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds608 pF @ 15 V

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