DMN3016LFDFQ-13
MOSFET BVDSS: 25V~30V U-DFN2020-Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, part number DMN3016LFDFQ-13, features a 30V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C. This AEC-Q101 qualified component is housed in a compact 6-UDFN Exposed Pad (U-DFN2020-6 Type F) package, suitable for surface mounting. The DMN3016LFDFQ-13 offers a low Rds(on) of 12mOhm at 11A and 10V Vgs, with a gate charge of 25.1 nC max at 10V. Input capacitance (Ciss) is 1415 pF max at 15V. Designed for automotive applications, this MOSFET operates across a junction temperature range of -55°C to 150°C and supports drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Its 730mW power dissipation rating at 25°C makes it suitable for power management and switching applications in automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 730mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1415 pF @ 15 V |
| Qualification | AEC-Q101 |
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