DMN3009SFGQ-13
MOSFET N-CH 30V 16A PWRDI3333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated DMN3009SFGQ-13 is a N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage and a continuous drain current of 16A at 25°C ambient, scaling to 45A at 25°C case temperature. The low on-resistance of 5.5mOhm at 20A and 10V gate-source voltage is achieved through its advanced MOSFET technology. The DMN3009SFGQ-13 is housed in a compact POWERDI3333-8 surface mount package, offering a maximum power dissipation of 900mW at 25°C ambient. Key electrical parameters include a maximum gate charge of 42 nC at 10V and input capacitance of 2000 pF at 15V. Operating across a temperature range of -55°C to 150°C, this component is qualified to AEC-Q101 standards, making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 15 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
DMN2053UQ-7
MOSFET BVDSS: 8V~24V SOT23 T&R 3
DMN2011UFDF-13
MOSFET N-CH 20V 14.2A 6UDFN
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
