DMN3009SFG-13
MOSFET N-CH 30V 16A PWRDI3333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated DMN3009SFG-13 is an N-Channel MOSFET featuring a 30V drain-source breakdown voltage. This component offers a continuous drain current of 16A at 25°C ambient and 45A at 25°C case temperature. Its low on-resistance is specified at 5.5mOhm maximum at 20A and 10V gate-source voltage. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage tolerance of ±20V. Key electrical characteristics include a maximum gate charge of 42 nC and an input capacitance of 2000 pF at 15V drain-source voltage. The DMN3009SFG-13 is housed in an 8-PowerVDFN package (POWERDI3333-8) for surface mounting and operates within a temperature range of -55°C to 150°C. Power dissipation is rated at 900mW (Ta). This MOSFET is commonly utilized in power management applications across automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 15 V |