DMN3009LFVW-13
MOSFET N-CH 30V 60A POWERDI3333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMN3009LFVW-13, an N-Channel MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage capability and a continuous drain current rating of 60A at 25°C (Tc). With a low on-resistance of 5mOhm at 30A and 10V Vgs, it ensures efficient power handling. The maximum gate charge is specified at 42nC at 10V, and input capacitance (Ciss) is a maximum of 2000pF at 15V. This device utilizes a PowerDI3333-8 (SWP) Type UX package with wettable flank termination for enhanced solder joint reliability. Operating across a temperature range of -55°C to 150°C (TJ), it is suitable for power management solutions in automotive and industrial sectors. The DMN3009LFVW-13 supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 2.5V at 250µA. Power dissipation is rated at 1W (Ta).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (SWP) Type UX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 15 V |