DMN3009LFVQ-7
MOSFET BVDSS: 25V~30V POWERDI333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMN3009LFVQ-7 is an N-Channel MOSFET designed for demanding applications. This AEC-Q101 qualified component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 5.5mOhm maximum at 30A and 10V Vgs. It is housed in an 8-PowerDI3333-8 (SWP) Type UX surface-mount package with wettable flanks, facilitating robust soldering processes. Key electrical characteristics include a maximum gate charge (Qg) of 42nC at 10V Vgs and an input capacitance (Ciss) of 2000pF maximum at 15V Vds. The power dissipation is rated at 1W (Ta). This MOSFET is suitable for automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (SWP) Type UX |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 15 V |
| Qualification | AEC-Q101 |
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