DMN3009LFVQ-13
MOSFET BVDSS: 25V~30V POWERDI333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated N-Channel MOSFET, part number DMN3009LFVQ-13, offers a 30V drain-source breakdown voltage and a continuous drain current of 60A at 25°C (Tc). This AEC-Q101 qualified component features a low 5.5 mOhm maximum on-resistance at 30A and 10V Vgs, achieved with a 4.5V to 10V drive voltage range. The device is housed in an 8-PowerDI3333-8 (SWP) Type UX surface mount package with wettable flanks, facilitating automated optical inspection. Key parameters include a maximum gate charge of 42 nC at 10V and an input capacitance of 2000 pF at 15V. With a 1W power dissipation at 25°C (Ta) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (SWP) Type UX |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 15 V |
| Qualification | AEC-Q101 |
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