DMN3005LK3-13
MOSFET N-CH 30V 14.5A TO252-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMN3005LK3-13, an N-Channel MOSFET designed for efficient power switching applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 14.5A at 25°C. The DMN3005LK3-13 offers a low on-resistance (Rds On) of 5mOhm at 20A and 10V, supported by a gate-source voltage (Vgs) range of 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 46.9 nC at 4.5V and an input capacitance (Ciss) of 4342 pF at 15V. With a power dissipation of 1.68W at 25°C, this surface-mount device is housed in a TO-252-3 (DPAK) package. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.68W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 46.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4342 pF @ 15 V |