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DMN26D0UFB4-7B

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DMN26D0UFB4-7B

DIODE

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated N-Channel MOSFET, part number DMN26D0UFB4-7B, is a surface mount device designed for efficient power switching. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 240mA at 25°C. The Rds(On) is specified at a maximum of 3 Ohms when driven at 4.5V with a 100mA drain current. The MOSFET operates with a gate-source voltage (Vgs) range of ±10V and a threshold voltage (Vgs(th)) of 900mV at 250µA. The input capacitance (Ciss) is a maximum of 14.1pF at 15V. This device is housed in a compact X2-DFN1006-3 package and offers a maximum power dissipation of 350mW at 25°C (Ta). The DMN26D0UFB4-7B is suitable for applications in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-XFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C240mA (Ta)
Rds On (Max) @ Id, Vgs3Ohm @ 100mA, 4.5V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id900mV @ 250µA
Supplier Device PackageX2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds14.1 pF @ 15 V

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