DMN26D0UFB4-7B
DIODEManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, part number DMN26D0UFB4-7B, is a surface mount device designed for efficient power switching. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 240mA at 25°C. The Rds(On) is specified at a maximum of 3 Ohms when driven at 4.5V with a 100mA drain current. The MOSFET operates with a gate-source voltage (Vgs) range of ±10V and a threshold voltage (Vgs(th)) of 900mV at 250µA. The input capacitance (Ciss) is a maximum of 14.1pF at 15V. This device is housed in a compact X2-DFN1006-3 package and offers a maximum power dissipation of 350mW at 25°C (Ta). The DMN26D0UFB4-7B is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 100mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | X2-DFN1006-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14.1 pF @ 15 V |
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