DMN26D0UFB4-7
MOSFET N-CH 20V 230MA 3DFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMN26D0UFB4-7 is an N-Channel MOSFET designed for high-efficiency switching applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 230mA at 25°C (Ta). The Rds(On) is specified as a maximum of 3 Ohms at 100mA and 4.5V Vgs. The device supports a wide drive voltage range from 1.5V to 4.5V. Key parameters include a maximum input capacitance (Ciss) of 14.1 pF at 15V and a gate threshold voltage (Vgs(th)) of 1.1V at 250µA. Operating temperature ranges from -55°C to 150°C (TJ). The DMN26D0UFB4-7 is housed in a compact 3-XFDFN (X2-DFN1006-3) package, suitable for surface mounting, and supplied on tape and reel. This MOSFET is utilized in portable electronics and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 230mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 100mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | X2-DFN1006-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14.1 pF @ 15 V |
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