DMN2500UFB4-7
MOSFET N-CH 20V 810MA 3DFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated DMN2500UFB4-7 is an N-Channel Power MOSFET designed for high-density applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 810mA at 25°C ambient. The low on-resistance of 400mOhm at 600mA and 4.5V gate-source voltage minimizes conduction losses. Its compact 3-XFDFN package, specifically the X2-DFN1006-3, facilitates space-constrained designs. Key parameters include a maximum gate charge of 0.74 nC at 4.5V and an input capacitance of 60.67 pF at 16V. The MOSFET supports gate drive voltages from 1.8V to 4.5V and operates across a wide temperature range of -55°C to 150°C. Applications include power management in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 810mA (Ta) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 600mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 460mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | X2-DFN1006-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±6V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.74 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60.67 pF @ 16 V |
Request a Quote
Clients Also Buy
DMN2009LSS-13
MOSFET N-CH 20V 12A 8SOP
DMT6030LFDF-7
MOSFET N-CH 60V 6.8A 6UDFN
DMN62D0UWQ-7
MOSFET N-CH 60V 340MA SOT323
